“GPX” has two types: HS-C series for Cu and HS-T series for barrier metals. The polishing performance is controllable for various processes and devices.
- High removal rate at low down force polishing.
- Low dishing and erosion.
- Removal selectivity of Cu, TaN, and oxide is tunable.
Advanced semiconductor devices with high performance are required to have multi-level layers, fine patterns to obtain high speed transmission. CMP process is indespensable to have well-planarized interlayer dielectric or metals in LSI and accomplish the above requirments.
Characteristics (Typical Values)
|Use||—||for Cu||for TaN||Non selective|
|Features||—||Abrasive free like High removal @low down force||High selective||Non selective|