CMP Slurry
BEOL Application
“GPX” has two types: HS-C series for Cu and HS-T series for barrier metals. The polishing performance is controllable for various processes and devices.
Features
- High removal rate at low down force polishing.
- Low dishing and erosion.
- Removal selectivity of Cu, TaN, and oxide is tunable.
CMP Process
Advanced semiconductor devices with high performance are required to have multi-level layers, fine patterns to obtain high speed transmission. CMP process is indespensable to have well-planarized interlayer dielectric or metals in LSI and accomplish the above requirments.
Characteristics (Typical Values)
| Item | Unit | HS-H635 | HS-T605 | HS-T815 | |
|---|---|---|---|---|---|
| Use | — | for Cu | for TaN | Non selective | |
| Features | — | Abrasive free like High removal @low down force | High selective | Non selective | |
| Removal Rate | Cu | A/min. | 8,000 | 250 | 480 |
| TaN | 40 | 650 | 750 | ||
| SiO2 | — | <50 | 650 | ||
| SiOC | — | <50 | 200 | ||